UMH2N-TN
UMH2N-TN
ПроизводительROHM Semicon
Партномер производителяUMH2N-TN
ОписаниеTransistors/Thyristors ROHM UMH2N-TN
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | ROHM Semicon |
| Вес | 0.025 |
| Operating Temperature | -40℃~+150℃ |
| Power Dissipation (Pd) | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 500mV |
| Transistor Type | - |
| Resistor Ratio | 1 |
| Output Voltage (VO(on)@Io/Ii) | 100mV@10mA,0.5mA |
| DC Current Gain (hFE@Ic,Vce) | 68@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 47kΩ |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Number | - |
| DC Current Gain | 68@5mA,5V |
| Output Voltage(VO(on)) | 100mV |