SSTPSC8H065BY-TR
SSTPSC8H065BY-TR
ПроизводительJSMSEMI
Партномер производителяSSTPSC8H065BY-TR
ОписаниеSilicon Carbide (SiC) Devices JSMSEMI SSTPSC8H065BY-TR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Микросхемы шрифтов |
| Производитель | JSMSEMI |
| Вес | 1 |
| Reverse Leakage Current (Ir) | 80uA@650V |
| Diode Configuration | 1 Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Non-Repetitive Peak Forward Surge Current | 65A |
| Current - Rectified | 38A |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Voltage - Forward(Vf@If) | 1.8V@10A |