STTH4R02SF
STTH4R02SF
ПроизводительFUXINSEMI
Партномер производителяSTTH4R02SF
ОписаниеDiodes FUXINSEMI STTH4R02SF
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Микросхемы шрифтов |
| Производитель | FUXINSEMI |
| Вес | 0.354 |
| Reverse Leakage Current (Ir) | 5uA |
| Reverse Recovery Time (trr) | 25ns |
| Diode Configuration | - |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Non-Repetitive Peak Forward Surge Current | 100A |
| Current - Rectified | 4A |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - Forward(Vf@If) | 890mV@4A |