UJ3N120035K3S

Партномер производителяUJ3N120035K3S

ОписаниеSilicon Carbide (SiC) Devices onsemi UJ3N120035K3S

Параметр	Значение
Категория
Вес
Operating Temperature	-
configuration	-
FET Type	N-Channel
Pd- Power Dissipation	-
RDS(on)	-
Drain to Source Voltage	-
Number	1 N-channel
Current - Continuous Drain(Id)	-
Output Capacitance(Coss)	-
Reverse Transfer Capacitance (Crss)	-
Ciss-Input Capacitance	-
Drain Current (Idss)	-
Gate-Source Breakdown Voltage (Vgss)	20V
Gate-Source Cutoff Voltage (VGS(off))	-