S1P14R120HSE-A
S1P14R120HSE-A
ПроизводительSichainsemi
Партномер производителяS1P14R120HSE-A
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi S1P14R120HSE-A
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Полевой транзистор из карбида кремния (MOSFET) |
| Производитель | Sichainsemi |
| Вес | 38.8 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Pd- Power Dissipation | 349W |
| Drain to Source Voltage | 1.2kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Input Capacitance(Ciss) | 5.521nF |
| Gate Charge(Qg) | 230nC |
| Reverse Transfer Capacitance (Crss) | 22pF |
| Ciss-Input Capacitance | 5.521nF |