SG1M160120J
SG1M160120J
ПроизводительSichainsemi
Партномер производителяSG1M160120J
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi SG1M160120J
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 3.5 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Power Dissipation | 120W |
| Input Capacitance | 617pF |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| Channel Type | 1 N-Channel |
| Pd- Power Dissipation | 120W |
| Total Gate Charge | 25.4nC |
| Reverse Transfer Capacitance | 1.4pF |
| Continuous Drain Current | 21A |
| Drain-Source On-State Resistance(15V) | 160mΩ |
| RDS(on) | 160mΩ@15V |
| Drain to Source Voltage | 1.2kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 21A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Input Capacitance(Ciss) | 617pF |
| Gate Charge(Qg) | 25.4nC |
| Reverse Transfer Capacitance (Crss) | 1.4pF |
| Ciss-Input Capacitance | 617pF |