CMS120N080B
CMS120N080B
ПроизводительBruckewell
Партномер производителяCMS120N080B
ОписаниеSilicon Carbide (SiC) Devices Bruckewell CMS120N080B
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Полевой транзистор из карбида кремния (MOSFET) |
| Производитель | Bruckewell |
| Вес | 1.61 |
| Power Dissipation | 188W |
| configuration | - |
| Channel Type | 1 N-Channel |
| Total Gate Charge | 61nC |
| Continuous Drain Current | 35A |
| Encapsulated Type | - |
| Drain-Source On-State Resistance(20V) | 77mΩ |
| Drain-Source On-State Resistance(18V) | - |
| Drain-Source On-State Resistance(15V) | - |