NCE40TD120BT
NCE40TD120BT
ПроизводительWuxi NCE Power Semiconductor
Партномер производителяNCE40TD120BT
ОписаниеTransistors/Thyristors NCE NCE40TD120BT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi NCE Power Semiconductor |
| Вес | 4.7 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 468W |
| Voltage - Forward(Vf) | 2.1V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.8V@40A,15V |
| Gate Charge(Qg) | 298nC@15V |
| Td(off) | 170ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 134pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 2.3mJ |
| Output Capacitance(Coes) | 177pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 5.59nF |
| Pulsed Current- Forward(Ifm) | 120A |