NCE40TD65BT
NCE40TD65BT
ПроизводительWuxi NCE Power Semiconductor
Партномер производителяNCE40TD65BT
ОписаниеTransistors/Thyristors NCE NCE40TD65BT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi NCE Power Semiconductor |
| Вес | 7.8 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 286W |
| Voltage - Forward(Vf) | 1.7V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.9V@40A,15V |
| Gate Charge(Qg) | 176nC@15V |
| Td(off) | 168ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 94pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 242ns |
| Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 580uJ |
| Output Capacitance(Coes) | 136pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 4.894nF |
| Pulsed Current- Forward(Ifm) | 160A |