NCE50TD120VT
NCE50TD120VT
ПроизводительWuxi NCE Power Semiconductor
Партномер производителяNCE50TD120VT
ОписаниеTransistors/Thyristors NCE NCE50TD120VT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi NCE Power Semiconductor |
| Вес | 1 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 535W |
| Voltage - Forward(Vf) | 2.2V@50A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V |
| Gate Charge(Qg) | 370nC@15V |
| Td(off) | 170ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 167pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 150ns |
| Switching Energy(Eoff) | 1.7mJ |
| Turn-On Energy (Eon) | 2.6mJ |
| Output Capacitance(Coes) | 220pF |
| Current- Forward(If) | 50A |
| Input Capacitance(Cies) | 6.98nF |
| Pulsed Current- Forward(Ifm) | 200A |