NCE60TD65BT
NCE60TD65BT
ПроизводительWuxi NCE Power Semiconductor
Партномер производителяNCE60TD65BT
ОписаниеTransistors/Thyristors NCE NCE60TD65BT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi NCE Power Semiconductor |
| Вес | 8.037 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 319W |
| Voltage - Forward(Vf) | 2.4V@60A |
| Current - Collector(Ic) | 120A |
| Vce Saturation(VCE(sat)) | 1.9V@60A,15V |
| Gate Charge(Qg) | 262nC@15V |
| Td(off) | 170ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 138pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 186ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ |
| Output Capacitance(Coes) | 199pF |
| Current- Forward(If) | 60A |
| Input Capacitance(Cies) | 7.018nF |
| Pulsed Current- Forward(Ifm) | 240A |