NCE80TD60BT
NCE80TD60BT
ПроизводительWuxi NCE Power Semiconductor
Партномер производителяNCE80TD60BT
ОписаниеTransistors/Thyristors NCE NCE80TD60BT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi NCE Power Semiconductor |
| Вес | 6.18 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 390W |
| Voltage - Forward(Vf) | 1.75V@80A |
| Current - Collector(Ic) | 160A |
| Vce Saturation(VCE(sat)) | 1.7V@80A,15V |
| Gate Charge(Qg) | 331nC@15V |
| Td(off) | 172ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 181pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 194ns |
| Switching Energy(Eoff) | 1.45mJ |
| Turn-On Energy (Eon) | 1.43mJ |
| Output Capacitance(Coes) | 258pF |
| Current- Forward(If) | 80A |
| Input Capacitance(Cies) | 9.188nF |
| Pulsed Current- Forward(Ifm) | 240A |