SPT40N120T1B1
SPT40N120T1B1
ПроизводительSPTECH
Партномер производителяSPT40N120T1B1
ОписаниеTransistors/Thyristors SPTECH SPT40N120T1B1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SPTECH |
| Вес | 7.96 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 416W |
| Voltage - Forward(Vf) | 3.5V@40A |
| Current - Collector(Ic) | 40A |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Gate Charge(Qg) | 270nC@15V |
| Td(off) | 230ns |
| Td(on) | 55ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 1.5mJ |
| Turn-On Energy (Eon) | 2.4mJ |
| Input Capacitance(Cies) | 4.4nF@25V |