SPT60N65F1A1
SPT60N65F1A1
ПроизводительSPTECH
Партномер производителяSPT60N65F1A1
ОписаниеTransistors/Thyristors SPTECH SPT60N65F1A1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SPTECH |
| Вес | 7.73 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 260W |
| Voltage - Forward(Vf) | 2.9V@60A |
| Current - Collector(Ic) | 120A |
| Vce Saturation(VCE(sat)) | 2.2V@60A,15V |
| Gate Charge(Qg) | 158nC@15V |
| Td(off) | 165ns |
| Td(on) | 56ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 890uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Input Capacitance(Cies) | 3.8nF@30V |