SPT75N65F1
SPT75N65F1
ПроизводительSPTECH
Партномер производителяSPT75N65F1
ОписаниеTransistors/Thyristors SPTECH SPT75N65F1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SPTECH |
| Вес | 7.863 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 416W |
| Voltage - Forward(Vf) | 2.3V@75A |
| Current - Collector(Ic) | 150A |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V |
| Gate Charge(Qg) | 260nC@15V |
| Td(off) | 660ns |
| Td(on) | 110ns |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 8.4mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Output Capacitance(Coes) | 200pF |
| Current- Forward(If) | 150A |
| Input Capacitance(Cies) | 4.5nF |