YGW60N65F1A2
YGW60N65F1A2
Производительluxin-semi
Партномер производителяYGW60N65F1A2
ОписаниеTransistors/Thyristors luxin-semi YGW60N65F1A2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | luxin-semi |
| Вес | 8.03 |
| Operating Temperature | -40℃~+175℃ |
| Collector Current (Ic) | 60A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 312W |
| Voltage - Forward(Vf) | 1.8V@40A |
| Current - Collector(Ic) | 60A |
| Vce Saturation(VCE(sat)) | 2.2V@60A,15V |
| Gate Charge(Qg) | 158nC@15V |
| Td(off) | 165ns |
| Td(on) | 56ns |
| Reverse Transfer Capacitance (Cres) | 70pF |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 890uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Output Capacitance(Coes) | 130pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 3.8nF |