MSG80N60FQC
MSG80N60FQC
ПроизводительMASPOWER
Партномер производителяMSG80N60FQC
ОписаниеTransistors/Thyristors MASPOWER MSG80N60FQC
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 7.767 |
| Operating Temperature | -55℃~+150℃ |
| Collector Current (Ic) | 80A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 260W |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.6V@80A,15V |
| Gate Charge(Qg) | 110nC@15V |
| Td(off) | 334ns |
| Td(on) | 25ns |
| Reverse Transfer Capacitance (Cres) | 43pF |
| Switching Energy(Eoff) | 2.9mJ |
| Turn-On Energy (Eon) | 950uJ |
| Output Capacitance(Coes) | 175pF |
| Current- Forward(If) | 80A |
| Input Capacitance(Cies) | 3.19nF |