ESK150SH120AN
ESK150SH120AN
ПроизводительMASPOWER
Партномер производителяESK150SH120AN
ОписаниеTransistors/Thyristors MASPOWER ESK150SH120AN
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 302.5 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.6V@3mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 1.25kW |
| Voltage - Forward(Vf) | 2.2V@200A |
| Current - Collector(Ic) | 200A |
| Vce Saturation(VCE(sat)) | 3.2V@150A,15V |
| Gate Charge(Qg) | 1500nC |
| Td(off) | 300ns |
| Td(on) | 130ns |
| Reverse Transfer Capacitance (Cres) | 0.43nF |
| Reverse Recovery Time(trr) | 120ns |
| Output Capacitance(Coes) | 1.25nF |
| Current- Forward(If) | 150A |
| Input Capacitance(Cies) | 12.6nF |
| Pulsed Current- Forward(Ifm) | 300A |