MSG100T65HLF4
MSG100T65HLF4
ПроизводительMASPOWER
Партномер производителяMSG100T65HLF4
ОписаниеTransistors/Thyristors MASPOWER MSG100T65HLF4
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 39.25 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@0.6mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 1kW |
| Voltage - Forward(Vf) | 1.6V@75A |
| Current - Collector(Ic) | 200A |
| Vce Saturation(VCE(sat)) | 1.65V@100A,15V |
| Gate Charge(Qg) | 157nC@15V |
| Td(off) | 216ns |
| Td(on) | 84ns |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 3.8mJ |
| Turn-On Energy (Eon) | 5.4mJ |
| Output Capacitance(Coes) | 430pF |
| Current- Forward(If) | 150A |
| Input Capacitance(Cies) | 5.012nF |