MSG60T65HFC0
MSG60T65HFC0
ПроизводительMASPOWER
Партномер производителяMSG60T65HFC0
ОписаниеTransistors/Thyristors MASPOWER MSG60T65HFC0
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 7.933 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 625W |
| Voltage - Forward(Vf) | 2.1V@40A |
| Current - Collector(Ic) | 120A |
| Vce Saturation(VCE(sat)) | 1.9V@50A,15V |
| Gate Charge(Qg) | 132nC@15V |
| Td(off) | 90ns |
| Td(on) | 23ns |
| Reverse Transfer Capacitance (Cres) | 63pF |
| Reverse Recovery Time(trr) | 54ns |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | 2.6mJ |
| Output Capacitance(Coes) | 320pF |
| Current- Forward(If) | 60A |
| Input Capacitance(Cies) | 2.65nF |
| Pulsed Current- Forward(Ifm) | 240A |