7MBR35VM120-50

7MBR35VM120-50

ПроизводительFuji Electric
Партномер производителя7MBR35VM120-50
ОписаниеTransistors/Thyristors Fuji Electric 7MBR35VM120-50
DatasheetDatasheet

Характеристики

ПараметрЗначение
КатегорияПрочее
ПроизводительFuji Electric
Вес218.8
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@35mA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Pd- Power Dissipation210W
Voltage - Forward(Vf)2.45V@35A
Current - Collector(Ic)35A
Vce Saturation(VCE(sat))2.6V@35A,15V
Td(off)530ns
Td(on)390ns
Reverse Transfer Capacitance (Cres)2.9nF
IGBT TypeIGBT Module
Reverse Recovery Time(trr)350ns
Pulsed Current- Forward(Ifm)260A