FGW50N60HD
FGW50N60HD
ПроизводительFuji Electric
Партномер производителяFGW50N60HD
ОписаниеTransistors/Thyristors Fuji Electric FGW50N60HD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Fuji Electric |
| Вес | 8.045 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@50mA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 360W |
| Voltage - Forward(Vf) | 2V@25A |
| Current - Collector(Ic) | 95A |
| Td(off) | 310ns |
| Td(on) | 35ns |
| Reverse Transfer Capacitance (Cres) | 160pF |
| Reverse Recovery Time(trr) | 25ns |
| Switching Energy(Eoff) | 1.7mJ |
| Turn-On Energy (Eon) | 1.4mJ |
| Output Capacitance(Coes) | 210pF |
| Current- Forward(If) | 43A |
| Pulsed Current- Forward(Ifm) | 150A |