FGW75N65WE
FGW75N65WE
ПроизводительFuji Electric
Партномер производителяFGW75N65WE
ОписаниеTransistors/Thyristors Fuji Electric FGW75N65WE
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Fuji Electric |
| Вес | 1 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@75mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 520W |
| Voltage - Forward(Vf) | 2.5V@75A |
| Current - Collector(Ic) | 124A |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V |
| Gate Charge(Qg) | 300nC@520V |
| Reverse Transfer Capacitance (Cres) | 120pF |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 950uJ |
| Output Capacitance(Coes) | 150pF |
| Pulsed Current- Forward(Ifm) | 300A |