MBQ40T120FESTH
MBQ40T120FESTH
ПроизводительMagnaChip Semicon
Партномер производителяMBQ40T120FESTH
ОписаниеTransistors/Thyristors MagnaChip Semicon MBQ40T120FESTH
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MagnaChip Semicon |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 357W |
| Voltage - Forward(Vf) | 3V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Gate Charge(Qg) | 341nC@15V |
| Td(off) | 308ns |
| Td(on) | 65ns |
| Reverse Transfer Capacitance (Cres) | 107pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 540uJ |
| Turn-On Energy (Eon) | 1.96mJ |
| Output Capacitance(Coes) | 206pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 6.03nF |
| Pulsed Current- Forward(Ifm) | 160A |