MBQ40T120QESTH
MBQ40T120QESTH
ПроизводительMagnaChip Semicon
Партномер производителяMBQ40T120QESTH
ОписаниеTransistors/Thyristors MagnaChip Semicon MBQ40T120QESTH
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MagnaChip Semicon |
| Вес | 5.933 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 428W |
| Voltage - Forward(Vf) | 1.95V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 2.75V@40A,15V |
| Gate Charge(Qg) | 428nC@15V |
| Td(off) | 178ns |
| Td(on) | 74ns |
| Reverse Transfer Capacitance (Cres) | 86pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 285ns |
| Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 5.13mJ |
| Output Capacitance(Coes) | 158pF |
| Current- Forward(If) | 80A |
| Pulsed Current- Forward(Ifm) | 160A |