MBQ40T65QESTH
MBQ40T65QESTH
ПроизводительMagnaChip Semicon
Партномер производителяMBQ40T65QESTH
ОписаниеTransistors/Thyristors MagnaChip Semicon MBQ40T65QESTH
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MagnaChip Semicon |
| Вес | 7.967 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 230W |
| Voltage - Forward(Vf) | 1.5V@20A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 2.3V@40A,15V |
| Gate Charge(Qg) | 60nC@15V |
| Td(off) | 55ns |
| Td(on) | 6ns |
| Reverse Transfer Capacitance (Cres) | 37pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 500uJ |
| Output Capacitance(Coes) | 120pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 1.565nF |
| Pulsed Current- Forward(Ifm) | 120A |