IHW20N135R5F
IHW20N135R5F
ПроизводительFUXINSEMI
Партномер производителяIHW20N135R5F
ОписаниеTransistors/Thyristors FUXINSEMI IHW20N135R5F
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | FUXINSEMI |
| Вес | 8.253 |
| Operating Temperature | -40℃~+175℃ |
| Type | - |
| Power Dissipation (Pd) | 333W |
| Collector Current (Ic) | 40A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@1mA |
| Diode Forward Voltage (Vf@If) | 1.5V@20A |
| Diode Reverse Recovery Time (Trr) | - |
| Turn?off Delay Time (Td(off)) | 204ns |
| Turn?off Switching Loss (Eoff) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.85V@20A,15V |
| Turn?on Delay Time (Td(on)) | - |
| Total Gate Charge (Qg@Ic,Vge) | 175nC@20A,15V |
| Input Capacitance (Cies@Vce) | 1.781nF@25V |
| Turn?on Switching Loss (Eon) | 1.02mJ |
| Pd- Power Dissipation | 333W |
| Voltage - Forward(Vf) | 1.5V@20A |
| Current - Collector(Ic) | 40A |
| Vce Saturation(VCE(sat)) | 1.85V@20A,15V |
| Gate Charge(Qg) | 175nC@15V |
| Td(off) | 204ns |
| Td(on) | - |
| Reverse Transfer Capacitance (Cres) | 57pF |
| IGBT Type | - |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 1.02mJ |
| Turn-On Energy (Eon) | 1.02mJ |
| Output Capacitance(Coes) | 95pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 1.781nF |
| Pulsed Current- Forward(Ifm) | 60A |