BT25T120CKR
BT25T120CKR
ПроизводительWuxi China Resources Huajing Microelectronics
Партномер производителяBT25T120CKR
ОписаниеTransistors/Thyristors Wuxi China Resources Huajing Microelectronics BT25T120CKR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Wuxi China Resources Huajing Microelectronics |
| Вес | 7.825 |
| Operating Temperature | - |
| Type | - |
| Power Dissipation (Pd) | 208W |
| Collector Current (Ic) | 50A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@250uA |
| Diode Forward Voltage (Vf@If) | 2.7V@25A |
| Diode Reverse Recovery Time (Trr) | - |
| Turn?off Delay Time (Td(off)) | 198ns |
| Turn?off Switching Loss (Eoff) | 0.95mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.95V@25A,15V |
| Turn?on Delay Time (Td(on)) | 34ns |
| Total Gate Charge (Qg@Ic,Vge) | 145nC@25A,15V |
| Input Capacitance (Cies@Vce) | 2.37nF@30V |
| Turn?on Switching Loss (Eon) | 1.88mJ |
| Pd- Power Dissipation | 208W |
| Voltage - Forward(Vf) | 2.7V@25A |
| Current - Collector(Ic) | 50A |
| Vce Saturation(VCE(sat)) | 1.95V@25A,15V |
| Gate Charge(Qg) | 145nC@25A,15V |
| Td(off) | 198ns |
| Td(on) | 34ns |
| IGBT Type | - |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 950uJ |
| Turn-On Energy (Eon) | 1.88mJ |
| Input Capacitance(Cies) | 2.37nF@30V |