15T65SD
15T65SD
ПроизводительJUXING
Партномер производителя15T65SD
ОписаниеTransistors/Thyristors JUXING 15T65SD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JUXING |
| Вес | 2.27 |
| Operating Temperature | -40℃~+150℃ |
| Type | - |
| Power Dissipation (Pd) | 37.5W |
| Collector Current (Ic) | 15A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@300uA |
| Diode Forward Voltage (Vf@If) | - |
| Diode Reverse Recovery Time (Trr) | - |
| Turn?off Delay Time (Td(off)) | - |
| Turn?off Switching Loss (Eoff) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | - |
| Turn?on Delay Time (Td(on)) | - |
| Total Gate Charge (Qg@Ic,Vge) | - |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | - |
| Pd- Power Dissipation | 37.5W |
| Voltage - Forward(Vf) | 1.9V |
| Current - Collector(Ic) | 15A |
| Vce Saturation(VCE(sat)) | 1.8V@15A,15V |
| Gate Charge(Qg) | 21.1nC |
| Td(off) | 60ns |
| Td(on) | 125ns |
| Reverse Transfer Capacitance (Cres) | - |
| IGBT Type | - |
| Reverse Recovery Time(trr) | 186ns |
| Switching Energy(Eoff) | 210uJ |
| Turn-On Energy (Eon) | 330uJ |
| Output Capacitance(Coes) | - |
| Current- Forward(If) | - |
| Input Capacitance(Cies) | 812pF@25V |
| Pulsed Current- Forward(Ifm) | - |