AGM400D170B6TC
AGM400D170B6TC
ПроизводительAGM-Semi
Партномер производителяAGM400D170B6TC
ОписаниеTransistors/Thyristors AGMSEMI AGM400D170B6TC
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | AGM-Semi |
| Вес | 334.7 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@12mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Pd- Power Dissipation | 1.76kW |
| Voltage - Forward(Vf) | 1.8V@400A |
| Current - Collector(Ic) | 446A |
| Vce Saturation(VCE(sat)) | 2.6V@400A,15V |
| Gate Charge(Qg) | 2.1uC@15V |
| Td(off) | 690ns |
| Td(on) | 170ns |
| Reverse Transfer Capacitance (Cres) | 900pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 1.38us |
| Switching Energy(Eoff) | 58mJ |
| Turn-On Energy (Eon) | 173mJ |
| Current- Forward(If) | 400A |
| Input Capacitance(Cies) | 29.4nF |
| Pulsed Current- Forward(Ifm) | 600A |