AGW60N65
AGW60N65
ПроизводительANHI
Партномер производителяAGW60N65
ОписаниеTransistors/Thyristors ANHI AGW60N65
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | ANHI |
| Вес | 8.408 |
| Operating Temperature | - |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 375W |
| Collector Current (Ic) | 60A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.45V |
| Diode Reverse Recovery Time (Trr) | 121ns |
| Turn?off Delay Time (Td(off)) | 540ns |
| Turn?off Switching Loss (Eoff) | 2.13mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.4V |
| Turn?on Delay Time (Td(on)) | 125ns |
| Total Gate Charge (Qg@Ic,Vge) | 254nC |
| Input Capacitance (Cies@Vce) | 6.92nF |
| Turn?on Switching Loss (Eon) | 2.38mJ |
| Pd- Power Dissipation | 375W |
| Current - Collector(Ic) | 60A |
| Vce Saturation(VCE(sat)) | 1.4V |
| Gate Charge(Qg) | 254nC |
| Td(off) | 540ns |
| Td(on) | 125ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 121ns |
| Switching Energy(Eoff) | 2.13mJ |
| Turn-On Energy (Eon) | 2.38mJ |
| Input Capacitance(Cies) | 6.92nF |