MIQ75T065DFS
MIQ75T065DFS
Производительmiracle
Партномер производителяMIQ75T065DFS
ОписаниеTransistors/Thyristors MIRACLE POWER MIQ75T065DFS
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | miracle |
| Вес | 6.2 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 520W |
| Voltage - Forward(Vf) | 1.55V@70A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 2V@70A,15V |
| Gate Charge(Qg) | 273nC@15V |
| Td(off) | 82ns |
| Td(on) | 25ns |
| Reverse Transfer Capacitance (Cres) | 20pF |
| Reverse Recovery Time(trr) | 156ns |
| Switching Energy(Eoff) | 1.03mJ |
| Turn-On Energy (Eon) | 2.86mJ |
| Output Capacitance(Coes) | 171pF |
| Current- Forward(If) | 100A |
| Input Capacitance(Cies) | 4.472nF |
| Pulsed Current- Forward(Ifm) | 300A |