S1D030120C
S1D030120C
ПроизводительSichainsemi
Партномер производителяS1D030120C
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi S1D030120C
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Диоды SiC |
| Производитель | Sichainsemi |
| Вес | 7.556 |
| Forward Voltage (Vf@If) | 1.4V@30A |
| Reverse Voltage (Vr) | 1200V |
| Reverse Leakage Current (Ir) | 1uA@1200V |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV |
| Non-Repetitive Peak Forward Surge Current | 200A |
| Current - Rectified | 90A |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Voltage - Forward(Vf@If) | 1.4V@30A |