YHJ-65P150AMC
YHJ-65P150AMC
ПроизводительNITRIDE
Партномер производителяYHJ-65P150AMC
ОписаниеGallium Nitride (GaN) Devices NITRIDE YHJ-65P150AMC
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | NITRIDE |
| Вес | 0.347 |
| Operating Temperature | - |
| Type | - |
| Power Dissipation | - |
| Drain-source on-state resistance | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Transistor Type | - |
| Pd- Power Dissipation | - |
| Total Gate Charge | 10nC |
| Continuous Drain Current | 12A |
| Drain Source Breakdown Voltage | 650V |
| Gate Threshold Voltage | - |
| Drain Source On-State Resistance(8V) | - |
| Technical Route | Vertical Process |
| RDS(on) | 150mΩ@10V |
| Drain to Source Voltage | 650V |
| Operating Junction Temperature Range | - |
| Current - Continuous Drain(Id) | 12A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Input Capacitance(Ciss) | - |
| Output Capacitance(Coss) | - |
| Gate Charge(Qg) | 10nC |
| Reverse Transfer Capacitance (Crss) | - |
| Ciss-Input Capacitance | - |