MGW20N120
MGW20N120
ПроизводительMOTOROLA
Партномер производителяMGW20N120
ОписаниеTransistors/Thyristors MOTOROLA MGW20N120
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MOTOROLA |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | - |
| Power Dissipation (Pd) | 174W |
| Collector Current (Ic) | 28A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn?off Delay Time (Td(off)) | 190ns |
| Turn?off Switching Loss (Eoff) | 1.65mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Turn?on Delay Time (Td(on)) | 88ns |
| Total Gate Charge (Qg@Ic,Vge) | 62nC |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | - |
| Pd- Power Dissipation | 174W |
| Current - Collector(Ic) | 28A |
| Gate Charge(Qg) | 62nC |
| Td(off) | 190ns |
| Td(on) | 88ns |
| IGBT Type | - |
| Switching Energy(Eoff) | 1.65mJ |
| Turn-On Energy (Eon) | - |
| Input Capacitance(Cies) | - |