KGF25N120KDA
KGF25N120KDA
ПроизводительKEC Semicon
Партномер производителяKGF25N120KDA
ОписаниеTransistors/Thyristors KEC KGF25N120KDA
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | KEC Semicon |
| Вес | 8.1 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@25mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 227W |
| Voltage - Forward(Vf) | 2.4V@25A |
| Current - Collector(Ic) | 50A |
| Vce Saturation(VCE(sat)) | 2.4V@25A,15V |
| Gate Charge(Qg) | 160nC@15V |
| Td(off) | 180ns |
| Td(on) | 40ns |
| Reverse Transfer Capacitance (Cres) | 70pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 140ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.85mJ |
| Output Capacitance(Coes) | 115pF |
| Current- Forward(If) | 25A |
| Pulsed Current- Forward(Ifm) | 75A |