KGF40N65KDC-U/P
KGF40N65KDC-U/P
ПроизводительKEC Semicon
Партномер производителяKGF40N65KDC-U/P
ОписаниеTransistors/Thyristors KEC KGF40N65KDC-U/P
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | KEC Semicon |
| Вес | 8.29 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 208W |
| Voltage - Forward(Vf) | 2.5V@20A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 2.3V@40A,15V |
| Gate Charge(Qg) | 90nC@15V |
| Td(off) | 115ns |
| Td(on) | 60ns |
| Reverse Transfer Capacitance (Cres) | 30pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 97ns |
| Switching Energy(Eoff) | 720uJ |
| Turn-On Energy (Eon) | 1.24mJ |
| Output Capacitance(Coes) | 110pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 2.3nF |
| Pulsed Current- Forward(Ifm) | 80A |