KGF50N60KDA
KGF50N60KDA
ПроизводительKEC Semicon
Партномер производителяKGF50N60KDA
ОписаниеTransistors/Thyristors KEC KGF50N60KDA
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | KEC Semicon |
| Вес | 8.06 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@5mA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 277W |
| Voltage - Forward(Vf) | 1.8V@50A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Td(off) | 260ns |
| Td(on) | 60ns |
| Reverse Transfer Capacitance (Cres) | 150pF |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 1.15mJ |
| Turn-On Energy (Eon) | 1.25mJ |
| Output Capacitance(Coes) | 250pF |
| Current- Forward(If) | 50A |
| Input Capacitance(Cies) | 4nF |
| Pulsed Current- Forward(Ifm) | 100A |