KGF60N65KDF-U/H
KGF60N65KDF-U/H
ПроизводительKEC Semicon
Партномер производителяKGF60N65KDF-U/H
ОписаниеTransistors/Thyristors KEC KGF60N65KDF-U/H
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | KEC Semicon |
| Вес | 7.761 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 340W |
| Voltage - Forward(Vf) | 2.16V@60A |
| Current - Collector(Ic) | 120A |
| Vce Saturation(VCE(sat)) | 2.2V@60A,15V |
| Gate Charge(Qg) | 105nC@15V |
| Td(off) | 216ns |
| Td(on) | 56ns |
| Reverse Transfer Capacitance (Cres) | 34pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 116ns |
| Switching Energy(Eoff) | 1.7mJ |
| Turn-On Energy (Eon) | 3.2mJ |
| Output Capacitance(Coes) | 158pF |
| Current- Forward(If) | 60A |
| Pulsed Current- Forward(Ifm) | 120A |