DGTD120T25S1PT
DGTD120T25S1PT
ПроизводительDiodes Incorporated
Партномер производителяDGTD120T25S1PT
ОписаниеTransistors/Thyristors DIODES DGTD120T25S1PT
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Diodes Incorporated |
| Вес | 8.089 |
| Operating Temperature | - |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 348W |
| Collector Current (Ic) | 50A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Diode Reverse Recovery Time (Trr) | 100ns |
| Turn?off Delay Time (Td(off)) | 269ns |
| Turn?off Switching Loss (Eoff) | 0.55mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Turn?on Delay Time (Td(on)) | 73ns |
| Total Gate Charge (Qg@Ic,Vge) | 204nC |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 1.44mJ |
| Pd- Power Dissipation | 348W |
| Current - Collector(Ic) | 50A |
| Gate Charge(Qg) | 204nC |
| Td(off) | 269ns |
| Td(on) | 73ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 550uJ |
| Turn-On Energy (Eon) | 1.44mJ |
| Input Capacitance(Cies) | - |