DGTD65T15H2TF
DGTD65T15H2TF
ПроизводительDiodes Incorporated
Партномер производителяDGTD65T15H2TF
ОписаниеTransistors/Thyristors DIODES DGTD65T15H2TF
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Diodes Incorporated |
| Вес | 2.992 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.5mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 48W |
| Voltage - Forward(Vf) | 2.3V@15A |
| Current - Collector(Ic) | 30A |
| Vce Saturation(VCE(sat)) | 2V@15A,15V |
| Gate Charge(Qg) | 61nC@15V |
| Td(off) | 128ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 57pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 150ns |
| Switching Energy(Eoff) | 86uJ |
| Turn-On Energy (Eon) | 270uJ |
| Output Capacitance(Coes) | 31pF |
| Current- Forward(If) | 30A |
| Input Capacitance(Cies) | 1.129nF |
| Pulsed Current- Forward(Ifm) | 60A |