CGWT40N65F2KAD
CGWT40N65F2KAD
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяCGWT40N65F2KAD
ОписаниеTransistors/Thyristors JSCJ CGWT40N65F2KAD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 8.98 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 250W |
| Voltage - Forward(Vf) | 1.56V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.7V@40A,15V |
| Gate Charge(Qg) | 79.2nC@15V |
| Td(off) | 67ns |
| Td(on) | 21ns |
| Reverse Transfer Capacitance (Cres) | 22pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 74ns |
| Switching Energy(Eoff) | 340uJ |
| Turn-On Energy (Eon) | 1.23mJ |
| Output Capacitance(Coes) | 175pF |
| Current- Forward(If) | 80A |
| Pulsed Current- Forward(Ifm) | 120A |