CGWT80N65F2KAD
CGWT80N65F2KAD
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяCGWT80N65F2KAD
ОписаниеTransistors/Thyristors JSCJ CGWT80N65F2KAD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 9.035 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 390W |
| Voltage - Forward(Vf) | 1.52V@80A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 1.7V@80A,15V |
| Gate Charge(Qg) | 108.8nC@15V |
| Td(off) | 94ns |
| Td(on) | 26ns |
| Reverse Transfer Capacitance (Cres) | 30pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 870uJ |
| Turn-On Energy (Eon) | 2.69mJ |
| Output Capacitance(Coes) | 256pF |
| Current- Forward(If) | 100A |
| Pulsed Current- Forward(Ifm) | 240A |