MCF450N120S2E3
MCF450N120S2E3
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяMCF450N120S2E3
ОписаниеTransistors/Thyristors JSCJ MCF450N120S2E3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.9V@17mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 2.08kW |
| Voltage - Forward(Vf) | 2.25V@450A |
| Current - Collector(Ic) | 450A |
| Vce Saturation(VCE(sat)) | 2.25V@450A |
| Td(off) | 510ns |
| Td(on) | 370ns |
| Reverse Transfer Capacitance (Cres) | 1.5nF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 230ns |
| Switching Energy(Eoff) | 39mJ |
| Turn-On Energy (Eon) | 52mJ |
| Current- Forward(If) | 450A |
| Input Capacitance(Cies) | 133nF |
| Pulsed Current- Forward(Ifm) | 900A |