MCF450N170L2E3
MCF450N170L2E3
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяMCF450N170L2E3
ОписаниеTransistors/Thyristors JSCJ MCF450N170L2E3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@18mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Pd- Power Dissipation | 2.5kW |
| Voltage - Forward(Vf) | 2V@450A |
| Current - Collector(Ic) | 450A |
| Vce Saturation(VCE(sat)) | 2.2V@450A,15V |
| Td(off) | 640ns |
| Td(on) | 260ns |
| Reverse Transfer Capacitance (Cres) | 0.7nF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 105mJ |
| Turn-On Energy (Eon) | 75mJ |
| Current- Forward(If) | 450A |
| Input Capacitance(Cies) | 60nF |
| Pulsed Current- Forward(Ifm) | 900A |