MCF600N120S2E3
MCF600N120S2E3
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяMCF600N120S2E3
ОписаниеTransistors/Thyristors JSCJ MCF600N120S2E3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@23mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 3.95kW |
| Voltage - Forward(Vf) | 1.75V@600A |
| Current - Collector(Ic) | 600A |
| Vce Saturation(VCE(sat)) | 2.15V@600A |
| Gate Charge(Qg) | 7.4uC |
| Td(off) | 625ns |
| Td(on) | 435ns |
| Reverse Transfer Capacitance (Cres) | 1.47nF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 35mJ |
| Turn-On Energy (Eon) | 55mJ |
| Current- Forward(If) | 600A |
| Input Capacitance(Cies) | 128nF |
| Pulsed Current- Forward(Ifm) | 1200A |