MCF600N170L2E3
MCF600N170L2E3
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяMCF600N170L2E3
ОписаниеTransistors/Thyristors JSCJ MCF600N170L2E3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@24mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Pd- Power Dissipation | 3.66kW |
| Voltage - Forward(Vf) | 2.2V@600A |
| Current - Collector(Ic) | 600A |
| Vce Saturation(VCE(sat)) | 2.2V@600A,15V |
| Td(off) | 595ns |
| Td(on) | 160ns |
| Reverse Transfer Capacitance (Cres) | 0.52nF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 115mJ |
| Turn-On Energy (Eon) | 145mJ |
| Current- Forward(If) | 600A |
| Pulsed Current- Forward(Ifm) | 1200A |