CGWT40N120F2KAD
CGWT40N120F2KAD
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяCGWT40N120F2KAD
ОписаниеTransistors/Thyristors JSCJ CGWT40N120F2KAD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 8.017 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 357W |
| Voltage - Forward(Vf) | 3.5V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.7V@40A,15V |
| Gate Charge(Qg) | 170.6nC@15V |
| Td(off) | 171ns |
| Td(on) | 41ns |
| Reverse Transfer Capacitance (Cres) | 27.5pF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 3mJ |
| Output Capacitance(Coes) | 125pF |
| Current- Forward(If) | 80A |
| Input Capacitance(Cies) | 4.225nF |
| Pulsed Current- Forward(Ifm) | 160A |