STGWT40V60DF
STGWT40V60DF
ПроизводительSTMicroelectronics
Партномер производителяSTGWT40V60DF
ОписаниеTransistors/Thyristors ST STGWT40V60DF
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | STMicroelectronics |
| Вес | 1 |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 283W |
| Collector Current (Ic) | 80A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,40A |
| Diode Reverse Recovery Time (Trr) | 41ns |
| Turn?off Delay Time (Td(off)) | 208ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Turn?on Delay Time (Td(on)) | 52ns |
| Total Gate Charge (Qg@Ic,Vge) | 226nC |
| Pd- Power Dissipation | 283W |
| Current - Collector(Ic) | 80A |
| Gate Charge(Qg) | 226nC |
| Td(off) | 208ns |
| Td(on) | 52ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 41ns |