STGYA50H120DF2
STGYA50H120DF2
ПроизводительSTMicroelectronics
Партномер производителяSTGYA50H120DF2
ОписаниеTransistors/Thyristors ST STGYA50H120DF2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | STMicroelectronics |
| Вес | 9.022 |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 535W |
| Collector Current (Ic) | 100A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2mA |
| Diode Reverse Recovery Time (Trr) | 340ns |
| Turn?off Delay Time (Td(off)) | 284ns |
| Turn?off Switching Loss (Eoff) | 2.1mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Turn?on Delay Time (Td(on)) | 40ns |
| Total Gate Charge (Qg@Ic,Vge) | 210nC |
| Turn?on Switching Loss (Eon) | 2mJ |
| Pd- Power Dissipation | 535W |
| Voltage - Forward(Vf) | 3.8V@50A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 2.6V@50A,15V |
| Gate Charge(Qg) | 210nC |
| Td(off) | 284ns |
| Td(on) | 40ns |
| Reverse Transfer Capacitance (Cres) | 104pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 340ns |
| Switching Energy(Eoff) | 2.1mJ |
| Turn-On Energy (Eon) | 2mJ |
| Output Capacitance(Coes) | 288pF |
| Current- Forward(If) | 100A |
| Input Capacitance(Cies) | 4.15nF |
| Pulsed Current- Forward(Ifm) | 200A |